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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTC90DAM60CT1G датащи(PDF) 2 Page - Microsemi Corporation |
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APTC90DAM60CT1G датащи(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page  APTC90DAM60CT1G www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 900V Tj = 25°C 200 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 900V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 52A 50 60 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 6mA 2.5 3 3.5 V IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 13.6 Coss Output Capacitance VGS = 0V ; VDS = 100V f = 1MHz 0.66 nF Qg Total gate Charge 540 Qgs Gate – Source Charge 64 Qgd Gate – Drain Charge VGS = 10V VBus = 400V ID = 52A 230 nC Td(on) Turn-on Delay Time 70 Tr Rise Time 20 Td(off) Turn-off Delay Time 400 Tf Fall Time Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 52A RG = 3.8Ω 25 ns Eon Turn-on Switching Energy 1.8 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω 1.5 mJ Eon Turn-on Switching Energy 2.52 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω 1.7 mJ CR1 SiC diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 96 600 IRM Maximum Reverse Leakage Current VR=1200V Tj = 175°C 168 3000 µA IF DC Forward Current Tc = 100°C 30 A Tj = 25°C 1.6 1.8 VF Diode Forward Voltage IF = 30A Tj = 175°C 2.3 3 V QC Total Capacitive Charge IF = 30A, VR = 600V di/dt =1000A/µs 120 nC f = 1MHz, VR = 200V 288 C Total Capacitance f = 1MHz, VR = 400V 207 pF |
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