APTC60DAM35T1G datasheet(2/6 Pages) MICROSEMI

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APTC60DAM35T1G

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VGS = 0V,VDS = 600V

Tj = 25°C

IDSS

Zero Gate Voltage Drain Current

VGS = 0V,VDS = 600V

Tj = 125°C

375

µA

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 72A

Ω

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 5.4mA

2.1

3.9

IGSS

Gate – Source Leakage Current

VGS = ±20 V, VDS = 0V

±150

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

Coss

Output Capacitance

5.13

Crss

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz

0.42

Total gate Charge

518

Qgs

Gate – Source Charge

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 300V

ID = 72A

222

Td(on)

Turn-on Delay Time

Rise Time

Td(off)

Turn-off Delay Time

283

Fall Time

Inductive Switching @ 125°C

VGS = 15V

VBus = 400V

ID = 72A

RG = 2.5Ω

Eon

Turn-on Switching Energy

1340

Eoff

Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 15V, VBus = 400V

ID = 72A, RG = 2.5Ω

1960

µJ

Eon

Turn-on Switching Energy

2192

Eoff

Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 15V, VBus = 400V

ID = 72A, RG = 2.5Ω

2412

µJ

Chopper diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VRRM

Maximum Peak Repetitive Reverse Voltage

600

Tj = 25°C

IRM

Maximum Reverse Leakage Current

VR=600V

Tj = 125°C

500

µA

DC Forward Current

Tc = 90°C

IF = 60A

1.7

2.3

IF = 120A

Diode Forward Voltage

IF = 60A

Tj = 125°C

1.4

Tj = 25°C

trr

Reverse Recovery Time

Tj = 125°C

140

Tj = 25°C

100

Qrr

Reverse Recovery Charge

IF = 60A

VR = 400V

di/dt =200A/µs

Tj = 125°C

690

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