Absolute Maximum Ratings

All Ratings: T

Symbol

Parameter

Ratings

Unit

V

DSS

Drain Source Voltage

200

Volts

I

D

Continuous Drain Current @ T

56

Amps

I

DM

224

V

GS

Gate-Source Voltage Continuous

±30

Volts

V

GSM

Gate-Source Voltage Transient

±40

P

D

Total Power Dissipation @ T

300

Watts

Linear Derating Factor

2.4

W/C°

T

Operating and Storage Junction Temperature Range

-55 to 150

°C

T

L

Lead Temperature for Soldering: 0.063" from Case for 10 Seconds

300

I

AR

56

Amps

E

AR

30

mJ

E

AS

1300

FEATURES

• Faster switching

• Lower Leakage

• 100% Avalanche tested

• Popular TO-247 Package

• RoHS compliant

200V, 56A, 0.045

Ω

APT20M45BVR(G)

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect, increase

faster switching speeds through optimized gate layout.

Microsemi Website - http://www.microsemi.com

Static Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

BV

DSS

Drain-Source Breakdown Voltage (V

200

Volts

I

D(on)

56

Amps

R

DS(on)

0.045

Ohms

I

DSS

Zero Gate Voltage Drain Current (V

25

μA

Zero Gate Voltage Collector Current (V

250

I

GSS

Gate-Source Leakage Current (V

±100

nA

V

GS(th)

Gate Threshold Voltage (V

2

4

Volts

TO-247

APT20M45BVR(G)

G

D

S

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.