APT17F80B datasheet(2/4 Pages) MICROSEMI

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Static Characteristics

TJ=25°Cunlessotherwisespecified

Dynamic Characteristics

TJ=25°Cunlessotherwisespecified

Source-Drain Diode Characteristics

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

J = 25°C, L = 19.7mH, RG = 25Ω, IAS = 9A.

3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.

4 C

o(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.

5 C

o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of

DS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11.

6 R

G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.

Unit

V/°C

Ω

mV/°C

µA

Unit

µC

V/ns

Min

Typ

Max

800

0.87

0.42

0.58

2.5

-10

250

1000

±100

Min

Typ

Max

1.0

216

250

371

450

0.97

2.33

Min

Typ

Max

3757

374

177

122

Test Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 250µA

VGS = 10V, ID = 9A

VGS = VDS, ID = 1mA

VDS = 533V

TJ = 25°C

VGS = 0V

TJ = 125°C

VGS = ±30V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

ISD = 9A, TJ = 25°C, VGS = 0V

TJ = 25°C

TJ = 125°C

ISD = 9A 3

TJ = 25°C

diSD/dt = 100A/µs

TJ = 125°C

VDD = 100V

TJ = 25°C

TJ = 125°C

ISD ≤ 9A, di/dt ≤1000A/µs, VDD = 400V,

TJ = 125°C

Test Conditions

VDS = 50V, ID = 9A

VGS = 0V, VDS = 25V

f = 1MHz

VGS = 0V, VDS = 0V to 400V

VGS = 0 to 10V, ID = 9A,

VDS = 400V

ResistiveSwitching

VDD = 533V, ID = 9A

RG = 2.2Ω 6 , VGG = 15V

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Drain-Source On Resistance 3

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 1

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time Preliminary 05-2008

Turn-Off Delay Time

Current Fall Time

Symbol

BR(DSS)

∆V

BR(DSS)/∆TJ

DS(on)

GS(th)

∆V

GS(th)/∆TJ

DSS

GSS

Symbol

rrm

dv/dt

Symbol

iss

rss

oss

o(cr)

o(er)

d(on)

d(off)

APT17F80B_S

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