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2009.12 - Rev.A

Midium Power Transistors (30V / 3A)

2SCR552P

 Structure

 Dimensions

(Unit : mm)

NPN Silicon epitaxial planar transistor

 Features

1) Low saturation voltage, typically

2) High speed switching

 Applications

Driver

 Inner circuit

(Unit : mm)

Package

Taping

Code

T100

Basic ordering unit (pieces)

1000

2SCR552P



 Absolute maximum ratings

(Ta = 25

C)

Symbol

Limits

Unit

Collector-base voltage

30

V

Collector-emitter voltage

30

V

Emitter-base voltage

6V

DC

3A

Pulsed

6A

0.5

W

2W

Junction temperature

150

C

Range of storage temperature

-55 to 150

C

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a recommended land.

*3 Mounted on a ceramic board. (40x40x0.7mm³)

 Packaging specifications

Type

Parameter

Collector current

Power dissipation

*1

*2

*3

Abbreviated symbol : NF

(1)

(2)

(3)

(1) Base

(2) Collector

(3) Emitter

(1)

(3)

(2)