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2N5793 датащи(PDF) 2 Page - Microsemi Corporation

номер детали 2N5793
подробное описание детали  NPN SILICON DUAL TRANSISTOR
PDF  2 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N5793 датащи(HTML) 2 Page - Microsemi Corporation

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2N5793, 2N5794 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 100 µAdc, VCE = 10 Vdc
2N5793
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 100 µAdc, VCE = 10 Vdc
2N5794
IC = 1.0 mAdc, VCE = 10 Vdc
2N5794U
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
hFE
hFE
20
25
35
40
25
20
35
50
75
100
40
50
120
300
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 300 mAdc, IB = 30 mAdc
VCE(sat)
0.3
0.9
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 300 mAdc, IB = 30 mAdc
VBE(sat)
0.6
1.2
1.8
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
hfe
2.0
10
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
8.0
pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
33
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = 15 mAdc, VBE(off) = 0.5 Vdc
ton
45
ηs
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
toff
310
ηs
(3) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
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