Static Characteristics

Dynamic Characteristics

Source-Drain Diode Characteristics

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.

4 C

5 C

V

6 R

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

G

D

S

Unit

V

V/°C

Ω

V

mV/°C

μA

nA

Unit

S

pF

nC

ns

Unit

A

V

ns

μC

A

V/ns

Min

Typ

Max

800

0.87

0.65

0.9

2.5

4

5

-10

250

1000

±100

Min

Typ

Max

12

46

1.0

181

210

300

360

0.71

1.61

8.3

11.9

25

Min

Typ

Max

11

2471

42

246

116

58

80

13

41

14

20

61

18

Test Conditions

V

Reference to 25°C, I

V

V

V

T

V

T

V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

T

T

I

3

T

di

T

V

T

T

I

T

Test Conditions

V

V

f = 1MHz

V

V

V

Resistive Switching

V

R

6

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Symbol

V

BR(DSS)

∆V

R

DS(on)

V

GS(th)

∆V

I

DSS

I

GSS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

I

rrm

dv/dt

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

APT11F80B_S