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1000MP

0.6 Watts, 18 Volts

1150 MHz

GENERAL DESCRIPTION

The 1000MP is a COMMON EMITTER transistor capable of providing 0.6

Watt of Class A, RF output power to 1150 MHz. This transistor is specifically

designed for general Class A amplifier applications. It utilizes gold metalization

and diffused ballasting to provide high reliability and supreme ruggedness.

CASE OUTLINE

55FW

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25

°C

5.3 W

Maximum Voltage and Current

45 V

3.5 V

300 mA

Maximum Temperatures

Storage Temperature

-40 to +150

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Output

F = 1150 MHz

0.6

W

Power Input

0.05

W

Power Gain

10.8

dB

Transition Frequency

3.7

GHz

VSWR

Load Mismatch Tolerance

10:1

FUNCTIONAL CHARACTERISTICS @ 25

°C

Emitter to Base Breakdown

Ie = 1 mA

3.5

V

Collector to Base Breakdown

Ic = 1 mA

40

V

Ices

Collector to Emitter Leakage

Vce=28V

1

mA

DC – Current Gain

Vce = 5V, Ic = 100 mA

15

Capacitance

Vcb = 28V, f =1 MHz

2.0

3.0

pF

Thermal Resistance

33

°C/W

Note 1: At rated output power

Rev A: Updated June 2009