HTP8A60 datasheet(1/3 Pages) HUASHAN

номер детали	HTP8A60

подробное описание детали	NON INSULATED TYPE TRIAC (TO-220 PACKAGE)

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производитель	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

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Shantou Huashan Electronic Devices Co.,Ltd.

HTP8A60

NON INSULATED TYPE TRIAC (TO-220 PACKAGE)

█ Features

* Repetitive Peak Off-State Voltage: 600V

* R.M.S On-state Current(IT(RMS)=8A)

* High Commutation dv/dt

█ General Description

The Triac HTP8A60 is suitable for AC switching application, phase

control application such as heater control, motor control, lighting control,

and static switching relay.

█ Absolute Maximum Ratings（T

a=25℃）

Tstg——Storage Temperature……………………………………………………………… -40~125℃

Tj ——Operating Junction Temperature …………………………………………………… -40~125℃

PGM——Peak Gate Power Dissipation………………………………………………………………… 5W

VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V

IT（RMS）——R.M.S On-State Current（Ta=105℃）………………………………………………… 8A

VGM——Peak Gate Voltage………………………………………………………………… 10V

I GM —— Peak Gate Current ……… …………………………………………………… 2. 0 A

ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)………… 80/88A

█ Electrical Characteristics（T

a=25℃）

Symbol

Items

Min.

Typ.

Max.

Unit

Conditions

IDRM

Repetitive Peak Off-State Current

2.0

mA

VD=VDRM, Single Phase,Half

Wave, TJ=125℃

VTM

Peak On-State Voltage

1.4

V

IT=12A, Inst. Measurement

I+GT1

Gate Trigger Current（Ⅰ）

30

mA

VD=6V, RL=10 ohm

I- GT1

Gate Trigger Current（Ⅱ）

30

mA

VD=6V, RL=10 ohm

I-GT3

Gate Trigger Current（Ⅲ）

30

mA

VD=6V, RL=10 ohm

V+ GT1

Gate Trigger Voltage（Ⅰ）

1.5

V

VD=6V, RL=10 ohm

V- GT1

Gate Trigger Voltage（Ⅱ）

1.5

V

VD=6V, RL=10 ohm

V- GT3

Gate Trigger Voltage（Ⅲ）

1.5

V

VD=6V, RL=10 ohm

VGD

Non-Trigger Gate Voltage

0.2

V

TJ=125℃,VD=1/2VDRM

(dv/dt)c

Critical Rate of Rise of Off-State

Voltage at Commutation

10

V/µS

TJ=125℃,VD=2/3VDRM

(di/dt)c=-4A/ms

IH

Holding Current

15

mA

Rth(j-c)

Thermal Resistance

2.0

℃/W Junction to case

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