HFP730 datasheet(2/6 Pages) HUASHAN

номер детали	HFP730

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

производитель	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

домашняя страница	http://www.huashan.com.cn

Logo

2 / 6 page

Shantou Huashan Electronic Devices Co.,Ltd.

█

Electrical Characteristics（Ta=25℃ unless otherwise specified）

Symbol

Items

Min.

Typ.

Max.

Unit

Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

400

ID=250µA ,VGS=0V

µA

VDS =400V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

250

µA

VDS =320V, VGS=0V,Tj=125℃

IGSS

Gate – Body Leakage

±100

VGS= ±20V , VDS =0V

On Characteristics

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS , ID=250µA

RDS(on)

Static Drain-Source On-Resistance

1.0

Ω

VGS=10V, ID=3A

gFS

Forward Transconductance

2.9

VDS=40V, ID=3A (Note 1)

Dynamic Characteristics and Switching Characteristics

Ciss

Input Capacitance

1000

Coss

Output Capacitance

100

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

td(on)

Turn - On Delay Time

Rise Time

120

td(off)

Turn - Off Delay Time

180

Fall Time

110

VDD = 200 V, ID = 5.5Apk

RG= 25 Ω (Note 1,2)

Total Gate Charge

Qgs

Gate–Source Charge

4.3

Qgd

Gate–Drain Charge

VDS=0.8VDSS, ID=5.5A,

VGS = 10 V (Note 1,2)

Drain-Source Diode Characteristics and Maximun Ratings

Continuous Source–Drain Diode

Forward Current

5.5

ISM

Pulsed

Drain-Source

Diode

Forward Current

VSD

Source–Drain

Diode

Forward

On–Voltage

1.5

IS=5.5A,VGS=0

Notes:

1. Pulse Test: Pulse width≤300μS,Duty cycle≤2%

2. Essentially independent of operating temperature

HFP730

HFP730 датащи(PDF) 2 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

HFP730 датащи(HTML) 2 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL