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VG4616321B датащи(PDF) 9 Page - Vanguard International Semiconductor

номер детали VG4616321B
подробное описание детали  262,144x32x2-Bit CMOS Synchronous Graphic RAM
PDF  82 Pages
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производитель  VML [Vanguard International Semiconductor]
домашняя страница  http://www.vis.com.tw
Logo VML - Vanguard International Semiconductor

VG4616321B датащи(HTML) 9 Page - Vanguard International Semiconductor

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Document:1G5-0145
Rev.1
Page 9
VIS
VG4616321B/VG4616322B
262,144x32x2-Bit
Preliminary
CMOS Synchronous Graphic RAM
T0
T1
T2
T3
T4
T5
T6
T7
T8
T0
T1
T2
T3
T4
T5
T6
T7
T8
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
NOP
READ A
NOP
NOP
NOP
NOP
WRITE B
NOP
NOP
Read to Write interval (Burst Length °Ÿ 4, CAS Latency = 3)
DQM
DOUT A0
DQ’s
DINB0
DINB1
DINB2
: “H” or “L”
Must be Hi-Z before
the Write Command
CLK
COMMAND
NOP
NOP
BANK A
NOP
READ A
WRITE A
NOP
NOP
NOP
Read to Write interval (Burst Length °Ÿ 4, CAS Latency = 1, 2)
DQM
DIN A0
DIN A1
DIN A2
DIN A3
: “H” or “L”
Must be Hi-Z before
the Write Command
DIN A0
DIN A1
DIN A2
DIN A3
CAS Iatency = 1
tCK1,DQ’s
CAS Iatency = 2
tCK2,DQ’s
ACTIVATE
CLK
COMMAND
NOP
NOP
NOP
WRITE B
NOP
NOP
NOP
Read to Write interval (Burst Length °Ÿ 4, CAS Latency = 1, 2)
DQM
DIN B0
DIN B1
DINB2
DIN B3
: “H” or “L”
Must be Hi-Z before
the Write Command
DIN B0
DIN B1
DIN B2
DIN B3
CAS Iatency = 1
tCK1,DQ’s
CAS Iatency = 2
tCK2,DQ’s
READ A
DOUT A0
NOP
A read burst without auto precharge function may be interrupted by a BankPrecharge/
PrechargeAll command to the same bank. The following figure shows the optimum time that
BankPrecharge/PrechargeAll command is issued in different CAS latency.
1 Clk Interval



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