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VG36648041CT датащи(PDF) 21 Page - Vanguard International Semiconductor

номер детали VG36648041CT
подробное описание детали  CMOS Synchronous Dynamic RAM
PDF  70 Pages
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производитель  VML [Vanguard International Semiconductor]
домашняя страница  http://www.vis.com.tw
Logo VML - Vanguard International Semiconductor

VG36648041CT датащи(HTML) 21 Page - Vanguard International Semiconductor

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Document : 1G5-0153
Rev.1
Page 21
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
8.4 Multibank Operation- Write with Auto Precharge
During a WRITEA cycle interrupted by a Read, Write command of another banks, the auto-pre-
charge scheduled time would not be changed.
CLK
Command
CAS latency=2
DQ
Command
CAS latency=3
DQ
Hi-Z
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
Burst lengh=8
Auto precharge bank A starts
WRITA A
Read B
DA0
DA1
DB0
DB1
DB2
DB3
DB4
DB5
Hi-Z
Auto precharge bank A starts
WRITA A
Read B
DA0
DA1
DB0
DB1
DB2
DB3
DB4
CLK
Command
CAS latency=2
DQ
Command
CAS latency=3
DQ
Hi-Z
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
Burst lengh=8
Auto precharge bank A starts
WRITA A
Write B
DA0
DA1
DB0
DB1
DB2
DB3
DB4
DB6
DB7
Hi-Z
Auto precharge bank A starts
WRITA A
Write B
DA0
DA1
DB0
DB1
DB2
DB3
DB4
DB5
DB6
DB7
DB5
Multibank Operation
Multibank Operation



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