2N7002 datasheet(2/5 Pages) VISHAY

2 / 5 page

2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

www.vishay.com

11-2

Document Number: 70226

S-04279—Rev. F, 16-Jul-01

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Single

Total Quad

Parameter

Symbol

2N7000

2N7002

VQ1000J

VQ1000P

VQ1000J/P

BS170

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage—Non-Repetitive

VGSM

"40

"30

"25

Gate-Source Voltage—Continuous

VGS

"20

Continuous Drain Current

TA= 25_C

0.2

0.115

0.225

0.5

Continuous Drain Current

(TJ = 150_C)

TA= 100_C

0.13

0.073

0.14

0.175

Pulsed Drain Currenta

IDM

0.5

0.8

TA= 25_C

0.4

0.2

1.3

0.83

Power Dissipation

TA= 100_C

0.16

0.08

0.52

0.8

Thermal Resistance, Junction-to-Ambient

RthJA

312.5

625

62.5

156

_C/W

Operating Junction and

Storage Temperature Range

TJ, Tstg

–55 to 150

Notes

Pulse width limited by maximum junction temperature.

tp v 50 ms.

SPECIFICATIONS2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

2N7000

2N7002

Parameter

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 10 mA

VDS = VGS, ID = 1 mA

2.1

0.8

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 0.25 mA

2.0

2.5

VDS = 0 V, VGS = "15 V

"10

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 48 V, VGS = 0 V

TC = 125_C

1000

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

TC = 125_C

500

VDS = 10 V, VGS = 4.5 V

0.35

0.075

On-State Drain Currentb

ID(on)

VDS = 7.5 V, VGS = 10 V

0.5

VGS = 4.5 V, ID = 0.075 A

4.5

5.3

VGS = 5 V, ID = 0.05 A

3.2

7.5

Drain-Source On-Resistanceb

rDS(on)

TC = 125_C

5.8

13.5

DS(on)

VGS = 10 V, ID = 0.5 A

2.4

7.5

TJ = 125_C

4.4

13.5

Forward Transconductanceb

gfs

VDS = 10 V, ID = 0.2 A

100

Common Source Output Conductanceb

gos

VDS = 5 V, ID = 0.05 A

0.5

Dynamic

Input Capacitance

Ciss

Output Capacitance

Coss

VDS = 25 V, VGS = 0 V

f = 1 MHz

Reverse Transfer Capacitance

Crss

f = 1 MHz

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