VT73LVP10

Preliminary

2002-01-15

Page

3

MDST-0014-06

www.vaishali.com

Vaishali Semiconductor

747 Camden Avenue, Suite C

Campbell

CA 95008

Ph. 408.377.6060

Fax 408.377.6063

Table 4. DC Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Units

D input

1

Input HIGH Current

/EN input

50

µA

D input

1

Input LOW Current

/EN input

20

µA

Input Clamp Diode Voltage

-1.2

V

-40

2275

2375

2475

mV

25

2200

2300

2400

mV

Output HIGH Voltage

(1, 2)

85

2125

2225

2325

mV

-40

1350

1450

1550

mV

25

1400

1500

1600

mV

Output LOW Voltage

(1, 2)

85

1450

1550

1650

mV

Power Supply Current

(2)

33

mA

Notes:

1.The VT73LVP10 is designed to meet these specifications after thermal equilibrium has been established. The

circuit is in a test socket or mounted on a printed circuit board.

Table 5. AC Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Propagation Delay

(1)

0.7

1.2

ns

Propagation Delay

(1)

0.7

1.2

ns

Propagation Delay

/EN to Q, QN

1.5

2.5

ns

Propagation Delay

/EN to Q, QN

1.5

2.5

ns

Output Rise/Fall time

20%-80%

0.25

0.35

0.7

ns

Maximum Input Frequency

LVTTL or LVCMOS input

170

MHz

Maximum Input Frequency

(2)

750mV peak-to-peak sine

wave (AC coupled)

400

MHz

Notes:

2. Measured using a 750mV peak-to-peak, 50% duty cycle clock source.

Ordering Information

Part Number

Marking

Shipping/Packaging

No. of Pins

Package

Temperature

VT73LVP10S1

VT73LVP10S1

Tubes

8

SOIC

-40

°C to +85°C

VT73LVP10S1X

VT73LVP10S1

Tape & Reel

8

SOIC

-40

°C to +85°C

VT73LVP10M

VT73LVP10M

Tubes

8

MSOP

-40

°C to +85°C

VT73LVP10MX

VT73LVP10M

Tape & Reel

8

MSOP

-40

°C to +85°C

VT73LVP10/D

Dice in waffle-pak

-40

°C to +85°C

VT73LVP10/DW

Dice in wafer form

-40

°C to +85°C