PSI100SLASH06 datasheet(1/2 Pages) POWERSEM

номер детали	PSI100/06

подробное описание детали	IGBT Module

PDF	2 Pages

Scroll/Zoom	100%

производитель	POWERSEM [Powersem GmbH]

домашняя страница	http://www.powersem.com

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1 / 2 page

IGBT Module

I

C25

= 93 A

V

CES

= 600 V

V

CE(sat)typ. = 2.4 V

Features

•

Package with DCB ceramic

base plate

•

Isolation voltage 3000 V

∼

•

Planar glass passivated chips

•

Low forward voltage drop

•

Leads suitable for PC board

soldering

•

UL registered, E 148688

Applications

•

AC and DC motor control

•

AC servo and robot drives

•

power supplies

•

welding inverters

Advantages

•

Easy to mount with two screws

•

Space and weight savings

•

Improved temperature and

power cycling capability

•

High power density

•

Small and light weight

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

ECO-PAC

TM 2

 2002 POWERSEM reserves the right to change limits, test conditions and dimensions

Preliminary Data Sheet

*NTC optional

Caution: These Devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

PSIS 100/06*

PSSI 100/06*

PSI 100/06*

PSIG 100/06

PSI 100/06*

PSIS 100/06*

PSSI 100/06*

X15

X16

NTC

AC 1

L9

IK 10

F1

X15

X16

NTC

AC 1

L9

IK 10

T16

IGBTs

Symbol

Conditions

Maximum Ratings

V

CES

T

VJ = 25°C to 150°C

600

V

GES

± 20

V

I

C25

T

C = 25°C

93

A

I

C80

T

C = 80°C

63

A

I

CM

V

GE = ±15 V; RG = 15 Ω; TVJ = 125°C

150

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

CE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C

10

µs

(SCSOA)

non-repetitive

P

tot

T

C = 25°C

294

W

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

V

CE(sat)

I

C = 100 A; VGE = 15 V; TVJ =

25°C

2.4

2.8

V

T

VJ = 125°C

2.8

V

GE(th)

I

C = 1.5 mA; VGE = VCE

4.5

6.5

V

I

CES

V

CE = VCES;VGE = 0 V;

T

VJ =

25°C

1.4 mA

T

VJ = 125°C

6.5 mA

I

GES

V

CE = 0 V; VGE =

± 20 V

150

nA

t

d(on)

150

ns

t

r

60

ns

t

d(off)

450

ns

t

f

40

ns

E

on

3.2

mJ

E

off

2.2

mJ

C

ies

V

CE = 25 V; VGE = 0 V; f = 1 MHz

4.2

nF

R

thJC

(per IGBT)

0.43 K/W

R

thJH

with heatsink compound (0.42 K/m.K; 50 µm)

0.85

K/W

Inductive load, T

VJ = 125°C

V

CE = 300 V; IC = 60 A

V

GE = 15/0 V; RG = 15 Ω

PSIG 100/06

LMN

AIJK

S

L9

K10

GH 10

E2

X13

X15

NTC

X16

E2

VX 18

OP 9

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