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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PSII100/06 датащи(PDF) 1 Page - Powersem GmbH |
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PSII100/06 датащи(HTML) 1 Page - Powersem GmbH |
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1 / 2 page  tentative data sheet product still under development IGBT Module PSII 100/06* I C80 = 80 A V CES = 600 V V CE(sat)typ.= 2.3 V POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions Preliminary Data Sheet Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. Short Circuit SOA Capability Square RBSOA Features • Package with DCB ceramic base plate • Isolation voltage 3000 V ∼ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board soldering • UL Release applied Applications • AC and DC motor control • AC servo and robot drives • Power supplies • Welding inverters Advantages • Easy to mount with four screws • Space and weight savings • Improved temperature and power cycling capability • High power density • Small and light weight • Leads with expansion bend for stress relief *NTC optional IGBTs Symbol Conditions Maximum Ratings V CES T VJ = 25°C to 150°C 600 V V GES ± 20 V I C25 T C = 25°C 120 A I C80 T C = 80°C 80 A I CM V GE = ±15 V; RG = 2.2 Ω; TVJ = 125°C 200 A V CEK RBSOA, Clamped inductive load; L = 100 µH 360 V t SC V CE = VCES; VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C 10 µs (SCSOA) non-repetitive P tot T C = 25°C 379 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. V CE(sat) I C = 130 A; VGE = 15 V; TVJ = 25°C 2.3 2.9 V T VJ = 125°C 2.6 V V GE(th) I C = 1.5 mA; VGE = VCE 4.5 6.5 V I CES V CE = VCES;VGE = 0 V; T VJ = 25°C 1.2 mA T VJ = 125°C 7.5 mA I GES V CE = 0 V; VGE = ± 20 V 400 nA t d(on) 25 ns t r 11 ns t d(off) 150 ns t f 30 ns E on 0.8 mJ E off 2.3 mJ C ies V CE = 25 V; VGE = 0 V; f = 1 MHz 4.2 nF R thJC (per IGBT) 0.33 K/W R thJH with heatsink compound (0.42 K/m.K; 50 µm) 0.66 K/W Inductive load, T VJ = 125°C V CE = 300 V; IC = 80 A V GE = 15/0 V; RG = 2.2 Ω ECO-TOPTM 1 V3 V6 N1 G1 Q1 V10 V9 N15 K1 V13 V12 G15 V1 U1 A1 S15 D1 A9 A7 A15 R15 typical picture, for pin configuration see outline drawing |
Аналогичный номер детали - PSII100/06 |
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Аналогичное описание - PSII100/06 |
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ссылки URL |
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