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PSII75/12 датащи(PDF) 4 Page - Powersem GmbH

номер детали PSII75/12
подробное описание детали  IGBT Module
PDF  4 Pages
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производитель  POWERSEM [Powersem GmbH]
домашняя страница  http://www.powersem.com
Logo POWERSEM - Powersem GmbH

PSII75/12 датащи(HTML) 4 Page - Powersem GmbH

  PSII75/12 Datasheet HTML 1Page - Powersem GmbH PSII75/12 Datasheet HTML 2Page - Powersem GmbH PSII75/12 Datasheet HTML 3Page - Powersem GmbH PSII75/12 Datasheet HTML 4Page - Powersem GmbH  
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POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
tentative
data
sheet
product
still
under
development
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
times
versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
0
20406080
100
0
6
12
18
24
0
30
60
90
120
0
20406080
100
0
2
4
6
8
10
12
0
100
200
300
400
500
600
0,00001 0,0001
0,001
0,01
0,1
1
0,00001
0,0001
0,001
0,01
0,1
1
0 102030405060708090 100
0
2
4
6
8
10
0
300
600
900
1200
1500
0 10203040 50607080 90 100
0
5
10
15
20
0
60
120
180
240
single pulse
V
CE = 600 V
V
GE = ±15 V
I
C
= 50 A
T
J = 125°C
0
200
400
600
800 1000 1200
0
20
40
60
80
100
120
R
G = 22 Ω
T
J = 125°C
V
CEK < VCES
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
ZthJC
IGBT
diode
A
V
81T120
81T120
81T120
81T120
81T120
V
CE = 600 V
V
GE = ±15 V
R
G = 22 Ω
T
J = 125°C
V
CE = 600 V
V
GE = ±15 V
R
G = 22 Ω
T
J = 125°C
V
CE = 600 V
V
GE = ±15 V
I
C
= 50 A
T
J = 125°C
VID...75-12P1



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