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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PSII35/06 датащи(PDF) 1 Page - Powersem GmbH |
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PSII35/06 датащи(HTML) 1 Page - Powersem GmbH |
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1 / 5 page  IGBT Module PSII 35/06 I C25 = 31 A Sixpack V CES = 600 V V CE(sat)typ. = 1.9 V Features • NPT IGBT’s - positive temperature coefficient of saturation voltage - fast switching • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plat e • UL registered, E 148688 Applications • AC drives • power supplies with power factor correction Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density • Small and light weight POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PAC TM 2 2002 POWERSEM reserves the right to change limits, test conditions and dimensions Preliminary Data Sheet Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. PSII 35/06 IGBTs Symbol Conditions Maximum Ratings V CES T VJ = 25°C to 150°C 600 V V GES ± 20 V I C25 T C = 25°C 31 A I C80 T C = 80°C 21 A I CM V GE = ±15 V; RG = 47 Ω; TVJ = 125°C 40 A V CEK RBSOA, Clamped inductive load; L = 100 µH V CES t SC V CE = 600 V; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C 10 µs (SCSOA) non-repetitive P tot T C = 25°C 100 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. V CE(sat) I C = 20 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V T VJ = 125°C 2.2 V V GE(th) I C = 0.5 mA; VGE = VCE 4.5 6.5 V I CES V CE = VCES;VGE = 0 V; TVJ = 25°C 0.6 mA T VJ = 125°C 0.7 mA I GES V CE = 0 V; VGE = ± 20 V 100 nA t d(on) 50 ns t r 55 ns t d(off) 300 ns t f 30 ns E on 0.9 mJ E off 0.7 mJ C ies V CE = 25 V; VGE = 0 V; f = 1 MHz 1100 pF Q Gon V CE = 300 V; VGE = 15 V; IC = 20 A 65 nC R thJC (per IGBT) 1.3 K/W R thJH with heatsink compound (0.42 K/m.K; 50 µm) 2.5 K/W Inductive load, T VJ = 125°C V CE = 300 V; IC = 10 A V GE = ±15 V; RG = 82 Ω S9 X18 N9 L9 W14 R5 N5 H5 D5 A5 K12 K13 G1 F3 K10 A1 C1 |
Аналогичный номер детали - PSII35/06 |
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Аналогичное описание - PSII35/06 |
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