PSHM 40/06

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

Preliminary Data Sheet

Caution: These Devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

CoolMOS Power MOSFET

in ECO-PAC 2

N-Channel Enhancement Mode

Low R

Package with Electrically Isolated Base

I

D25

= 38 A

V

DSS

= 600 V

R

DSon

= 70 m

Ω

Ω

Ω

Ω

Ω

1)

Features

- Electrical isolation towards the

heatsink

- Low coupling capacitance to the heatsink

for reduced EMI

- High power dissipation

- High temperature cycling capability

of chip on DCB

- solderable pins for DCB mounting

- High blocking capability

- Low on resistance

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

due to reduced chip thickness

Applications

Advantages

cycling capability

MOSFET

Symbol

Conditions

Maximum Ratings

V

DSS

T

600

V

V

GS

±20

V

I

D25

T

38

A

I

D90

T

25

A

dv/dt

V

6

V/ns

T

E

AS

I

1.8

J

E

AR

I

5 µH; T

1

mJ

Symbol

Conditions

Characteristic Values

(T

min.

typ. max.

R

DSon

V

70 m

Ω

V

GSth

V

3.5

5.5

V

I

DSS

V

25°C

25 µA

T

60

µA

I

GSS

V

100 nA

Q

g

220

nC

Q

gs

55

nC

Q

gd

125

nC

t

d(on)

30

ns

t

r

95

ns

t

d(off)

100

ns

t

f

10

ns

V

F

(reverse conduction) I

0.9

1.1

V

R

thJC

per MOSFET

0.45 K/W

Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated

V

V

I

K13

K12

NTC

L4

L9

R18

A1

P18

E10

F10

L6