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PSD36 датащи(PDF) 2 Page - Powersem GmbH |
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PSD36 датащи(HTML) 2 Page - Powersem GmbH |
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2 / 2 page ![]() PSD 36 POWERSEM GmbH, Walperdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 0.5 1 1.5 2 2.5 0 50 100 150 200 V [V] F I F [A] 1:T = 150°C VJ 2:T = 25°C VJ 1 2 0.4 0.6 0.8 1 1.2 1.4 1.6 10 0 10 1 10 2 10 3 t[ms] I (A) FSM TVJ=45°C TVJ=150°C 480 500 I ------ IFSM F(OV) 0 VRRM 1/2 VRRM 1 VRRM 2 4 6 10 TVJ=45°C TVJ=150°C t [ms] 1 10 10 10 2 3 4 As 2 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 ∫i 2dt versus time (1-10ms) per diode (or thyristor) 30 10 0 10 20 30 40 50 60 70 80 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 TC °C DC sin.180° rec.120° rec.60° rec.30° 6.35 2.6 1.35 0.72 0.41 0.1 = RTHCA [K/W] IFAVM [A] Tamb [K] 0 50 100 150 [W] PVTOT PSD 36N Fig. 4 Power dissipation versus direct output current and ambient temperature { EMBED CorelDraw.Grafik.8 } Fig.5 Maximum forward current at case temperature { EMBED CorelDraw.Grafik.8 } Fig. 6 Transient thermal impedance per diode (or thyristor), calculated |
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