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H5GQ1H24AFR-R0C датащи(PDF) 161 Page - Hynix Semiconductor |
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H5GQ1H24AFR-R0C датащи(HTML) 161 Page - Hynix Semiconductor |
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161 / 173 page ![]() This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied. Rev. 1.0 /Nov. 2009 161 H5GQ1H24AFR 7.2. ON DIE TERMINATION (ODT) GDDR5 SGRAMs support multiple termination modes for its high speed input signals. When the termina‐ tion is enabled for a receiver, an impedance defined for that termination mode is applied between that input receiver and the VDDQ supply rail. This is commonly referred to as VDDQ termination. Registers have been defined to control the termination modes. ADD/CMD Termination is controlled using MR1 bits A4 and A5. Data termination is controlled using MR1 bits A2 and A3. WCK termination is controlled using MR3 bits A8 and A9. Table 55 includes all the high speed GDDR5 SGRAM signals whose receivers include on die termination to VDDQ and whether their termination can be disabled by ADD/CMD Term, DQ Term, or WCK Term. A “Yes” indicates whether the mode register field controls termination for the signal. Table 55. Signals Affected by Termination Control Registers ADD/CMD Term MR1 (A4,A5) DQ Term MR1 (A2,A3) WCK Term MR3 (A8,A9) Signal x32 x16 x32 x16 x32 x16 RAS#, CAS#, WE, CS#, CKE# Yes Yes No No No No A10/A0, A9/A1, BA0/A2, BA3/A3, BA2/A4, BA1/A5, A11/A6, A8/A7, A12/RFU/(NC), ABI# Yes Yes No No No No DQ[7:0], DBI0# No No Yes Yes No No DQ[15:8], DBI1# No Disabled Yes Disabled No Disabled DQ[23:16], DBI2# No No Yes Yes No No DQ[31:24], DBI3# No Disabled Yes Disabled No Disabled WCK01, WCK01#, WCK23, WCK23# No No No No Yes Yes |
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