SSM5H14F datasheet(2/7 Pages) TOSHIBA

2 / 7 page

SSM5H14F

2009-05-15

MOSFET

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Conditions

Min

Typ.

Max

Unit

V (BR) DSS

ID = 1 mA, VGS = 0 V

⎯

Drain-Source breakdown voltage

V (BR) DSX

ID = 1 mA, VGS = -12 V

⎯

Drain cut-off current

IDSS

VDS =30 V, VGS = 0 V

⎯

μA

Gate leakage current

IGSS

VGS = ±12 V, VDS = 0 V

⎯

±1

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 1 mA

0.4

⎯

1.0

Forward transfer admittance

|Yfs|

VDS = 3 V, ID = 2.0 A

(Note2)

3.8

7.7

⎯

ID = 2.0 A, VGS = 4.0 V

(Note2)

⎯

ID = 1.0 A, VGS = 2.5 V

(Note2)

⎯

Drain–source ON-resistance

RDS (ON)

ID = 0.5 A, VGS = 1.8 V

(Note2)

⎯

138

Input capacitance

Ciss

⎯

270

⎯

Output capacitance

Coss

⎯

Reverse transfer capacitance

Crss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

Total Gate Charge

⎯

4.3

⎯

Gate-Source Charge

Qgs

⎯

2.8

⎯

Gate-Drain Charge

Qgd

VDD = 15 V, ID= 3.0 A

VGS = 4 V

⎯

1.5

⎯

Turn-on time

ton

⎯

Switching time

Turn-off time

toff

VDD = 10 V, ID = 2 A

VGS = 0 to 2.5 V, RG = 4.7 Ω

⎯

Drain-Source forward voltage

VDSF

ID = -3.0 A, VGS = 0 V

(Note2)

⎯

–0.85

–1.2

Note 2: Pulse test

Switching Time Test Circuit

Precaution

Vth can be expressed as voltage between gate and source when the low operating current value is ID = 1 mA for

this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a

lower voltage than Vth.

(The relationship can be established as follows: VGS (off) < Vth < VGS (on))

Be sure to take this into consideration when using the device.

(b) VIN

2.5 V

ton

toff

0 V

VDD

VDS (ON)

10%

90%

10%

(a) Test Circuit

VDD = 10 V

RG = 4.7 Ω

D.U.

≤ 1%

VIN: tr, tf < 5 ns

Common Source

= 25°C

2.5 V

OUT

VDD

μs

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