MPC8323EEC datasheet(13/82 Pages) FREESCALE

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MPC8323E PowerQUICC™ II Pro Integrated Communications Processor Family Hardware Specifications, Rev. 3

Freescale Semiconductor

DDR1 and DDR2 SDRAM

This section describes the DC and AC electrical specifications for the DDR1 and DDR2 SDRAM interface

of the MPC8323E. Note that DDR1 SDRAM is Dn_GVDD(typ) = 2.5 V and DDR2 SDRAM is

Dn_GVDD(typ) = 1.8 V. The AC electrical specifications are the same for DDR1 and DDR2 SDRAM.

6.1

DDR1 and DDR2 SDRAM DC Electrical Characteristics

Table 12 provides the recommended operating conditions for the DDR2 SDRAM component(s) of the

MPC8323E when Dn_GVDD(typ) = 1.8 V.

Table 13 provides the DDR2 capacitance when Dn_GVDD(typ) = 1.8 V.

Table 12. DDR2 SDRAM DC Electrical Characteristics for D

_GVDD(typ) = 1.8 V

Parameter/Condition

Symbol

Min

Max

Unit

Notes

I/O supply voltage

_GVDD

1.71

1.89

I/O reference voltage

MVREF

nREF

0.49

× Dn_GVDD

0.51

× Dn_GVDD

I/O termination voltage

VTT

MVREF

nREF – 0.04

MVREF

nREF +0.04

Input high voltage

VIH

MVREF

nREF + 0.125

_GV

DD +0.3

—

Input low voltage

VIL

–0.3

MVREF

nREF – 0.125

—

Output leakage current

IOZ

–9.9

9.9

μA4

Output high current (VOUT = 1.35 V)

IOH

–13.4

—

Output low current (VOUT = 0.280 V)

IOL

13.4

—

Notes:

1. D

_GVDD is expected to be within 50 mV of the DRAM Dn_GVDD at all times.

2. MVREF

nREF is expected to be equal to 0.5 × Dn_GVDD, and to track Dn_GVDD DC variations as measured at the receiver.

Peak-to-peak noise on MVREF

nREF may not exceed ±2% of the DC value.

3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be

equal to MVREF

nREF. This rail should track variations in the DC level of MVREFnREF.

4. Output leakage is measured with all outputs disabled, 0 V

≤ VOUT ≤ Dn_GVDD.

Table 13. DDR2 SDRAM Capacitance for D

_GVDD(typ) = 1.8 V

Parameter/Condition

Symbol

Min

Max

Unit

Notes

Input/output capacitance: DQ, DQS

CIO

Delta input/output capacitance: DQ, DQS

CDIO

—0.5

Note:

1. This parameter is sampled. D

_GV

DD = 1.8 V ± 0.090 V, f = 1 MHz, TA =25°C, VOUT = Dn_GVDD ÷ 2,

VOUT (peak-to-peak) = 0.2 V.

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