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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F100C4 датащи(PDF) 58 Page - STMicroelectronics |
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STM32F100C4 датащи(HTML) 58 Page - STMicroelectronics |
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58 / 84 page  Electrical characteristics STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB 58/84 Doc ID 16455 Rev 2 Input/output AC characteristics The definition and values of input/output AC characteristics are given in Figure 25 and Table 35, respectively. Unless otherwise specified, the parameters given in Table 35 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 8. Table 35. I/O AC characteristics(1) 1. The I/O speed is configured using the MODEx[1:0] bits. Refer to the STM32F10xxx reference manual for a description of GPIO Port configuration register. MODEx [1:0] bit value(1) Symbol Parameter Conditions Max Unit 10 fmax(IO)out Maximum frequency (2) 2. The maximum frequency is defined in Figure 25. CL = 50 pF, VDD = 2 V to 3.6 V 2 MHz tf(IO)out Output high to low level fall time CL = 50 pF, VDD = 2 V to 3.6 V 125(3) 3. Guaranteed by design, not tested in production. ns tr(IO)out Output low to high level rise time 125(3) 01 fmax(IO)out Maximum frequency (2) CL= 50 pF, VDD = 2 V to 3.6 V 10 MHz tf(IO)out Output high to low level fall time CL= 50 pF, VDD = 2 V to 3.6 V 25(3) ns tr(IO)out Output low to high level rise time 25(3) 11 Fmax(IO)out Maximum frequency (2) CL = 50 pF, VDD = 2 V to 3.6 V 24 MHz tf(IO)out Output high to low level fall time CL = 30 pF, VDD = 2.7 V to 3.6 V 5(3) ns CL = 50 pF, VDD = 2.7 V to 3.6 V 8(3) CL = 50 pF, VDD = 2 V to 2.7 V 12(3) tr(IO)out Output low to high level rise time CL = 30 pF, VDD = 2.7 V to 3.6 V 5(3) CL = 50 pF, VDD = 2.7 V to 3.6 V 8(3) CL = 50 pF, VDD = 2 V to 2.7 V 12(3) -tEXTIpw Pulse width of external signals detected by the EXTI controller 10 ns |
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