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TSM4404CSRL датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали TSM4404CSRL
подробное описание детали  30V N-Channel MOSFET
PDF  6 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
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TSM4404CSRL датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM4404
30V N-Channel MOSFET
2/6
Version: A09
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID =250uA
BVDSS
30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID =250µA
VGS(TH)
0.7
--
1.4
V
Gate Body Leakage
VGS = ±12V, VDS =0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 24V, VGS =0V
IDSS
--
--
1.0
µA
VGS = 10V, ID =8.5A
--
24
30
VGS = 4.5V, ID =8.5A
RDS(ON)
--
27
33
Drain-Source On-State Resistance
a
VGS = 2.5V, ID =5A
--
40
48
mΩ
Forward Transconductance
a
VDS = 5V, ID =5A
gfs
--
16
--
S
Diode Forward Voltage
IS = 1A, VGS =0V
VSD
--
0.76
1.0
V
Dynamic
b
Total Gate Charge
Qg
--
9.7
12
Gate-Source Charge
Qgs
--
1.63
--
Gate-Drain Charge
VDS = 15V, ID = 8.5A,
VGS = 4.5V
Qgd
--
3.1
--
nC
Input Capacitance
Ciss
--
857
1030
Output Capacitance
Coss
--
97
--
Reverse Transfer Capacitance
VDS = 15V, VGS = 0V,
f = 1.0MHz
Crss
--
71
--
pF
Switching
c
Turn-On Delay Time
td(on)
--
3.3
5
Turn-On Rise Time
tr
--
4.7
7
Turn-Off Delay Time
td(off)
--
26
39
Turn-Off Fall Time
VDD = 15V, RL = 1.8Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
tf
--
4.1
6.2
nS
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.



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