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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSM802 датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM802 датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM802 20V N-Channel MOSFET w/ESD Protected 1/6 Version: D08 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 25 @ VGS = 4.5V 5 30 @ VGS = 2.5V 4 TDFN 3x3 20 65 @ VGS = 1.8V 2 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance ● Low Profile 0.75mm (typ.) ● ESD Protect 2KV Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Part No. Package Packing TSM802CQ RV TDFN 3x3 3Kpcs / 7” Reel TSM802CQ RVG TDFN 3x3 3Kpcs / 7” Reel TSM802CQ RK TDFN 3x3 10Kpcs / 13” Reel TSM802CQ RKG TDFN 3x3 10Kpcs / 13” Reel Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 6 A Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) a,b IS 1.4 A Ta = 25 oC 3.1 Maximum Power Dissipation Ta = 75 oC PD 1.6 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RθJC 4.5 oC/W Junction to Ambient Thermal Resistance (PCB mounted) RθJA 48 oC/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on 1”x1” FR4 Board, t ≤ 10 sec. c. Pulse limited <5s @ ID=10A / VGS=10V Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain Block Diagram N-Channel MOSFET |
Аналогичный номер детали - TSM802 |
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Аналогичное описание - TSM802 |
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