Preliminary

TSM414K34

30V N-Channel MOSFET with Schottky Diode

1/4

Version: Preliminary

MOSFET PRODUCT SUMMARY

4

30

2

SOP-8

SCHOTTKY PRODUCT SUMMARY

30

0.51

3

Features

●

Advance Trench Process Technology

●

High Density Cell Design for Ultra Low On-resistance

Application

●

Load Switch

●

PA Switch

Ordering Information

Part No.

Package

Packing

TSM414K34CS RL

SOP-8

2.5Kpcs / 13” Reel

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

4

A

Pulsed Drain Current,

20

A

Continuous Source Current (Diode Conduction)

a,b

4

A

Maximum Power Dissipation @ Ta = 25

2

W

Operating Junction Temperature

+150

Operating Junction and Storage Temperature Range

-55 ~ +150

Drain-Source Voltage

30

V

Average Forward Current

3

A

Non-Peak Repetitive Surge Current

c

20

A

Thermal Performance

Junction to Ambient Thermal Resistance

62.5

Notes: a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 10 sec.

C. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz.

Block Diagram

N-Channel MOSFET with Schottky Diode

Pin Definition:

1. Anode

8. Cathode

2. Anode

7. Cathode

3. Source

6. Drain

4. Gate

5. Drain