TSM2N60S

600V N-Channel Power MOSFET

1/1

Version: A09

SOT-223

General Description

The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without

degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast

recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM

motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe

operating areas are critical and offer additional and safety margin against unexpected voltage transients.

Features

●

Robust high voltage termination

●

Avalanche energy specified

●

Diode is characterized for use in bridge circuits

●

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

Ordering Information

Part No.

Package

Packing

TSM2N60SCW RP

SOT-223

2.5Kpcs / 13” Reel

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Continuous Drain Current

0.6

A

Pulsed Drain Current

1.5

A

Continuous Source Current (Diode Conduction)

1

A

dv/dt

50

V/ns

Total Maximum Power Dissipation @Ta = 25

2.5

W

Operating Junction Temperature

+150

ºC

Operating Junction and Storage Temperature Range

-55 to +150

ºC

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance - Junction to Case

15

ºC/W

Thermal Resistance - Junction to Ambient

55.8

ºC/W

Notes: Surface mounted on FR4 board t ≤ 10sec

PRODUCT SUMMARY

600

0.6

Pin Definition:

1. Gate

2. Drain

3. Source

Block Diagram

N-Channel MOSFET