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TSC136 датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали TSC136
подробное описание детали  High Voltage NPN Transistor
PDF  5 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC136 датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSC136
High Voltage NPN Transistor
2/5
Version: C07
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 10mA, IB = 0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
a
IC = 10mA, IE = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
9
--
--
V
Collector Cutoff Current
VCB = 700V, IE = 0
ICBO
--
--
100
uA
Emitter Cutoff Current
VEB = 9V, IC = 0
IEBO
--
--
10
uA
IC =0.5A, IB =0.1A
VCE(SAT)1
--
--
0.5
IC =0.6A, IB =60mA
VCE(SAT)2
--
--
0.7
Collector-Emitter Saturation Voltage
a
IC =2A, IB =0.5A
VCE(SAT)3
--
1.5
2
V
VCE = 5V, IC = 10mA
hFE 1
10
27
--
VCE = 5V, IC = 1A
hFE 2
10
--
30
DC Current Gain
VCE = 5V, IC = 2A
hFE 3
4
--
24
Frequency
VCE = 10V, IC = 0.1A
fT
4
--
--
MHz
Output Capacitance
VCB = 10V, f = 0.1MHz
Cob
--
21
--
pF
Turn On Time
tON
--
0.4
--
uS
Storage Time
tSTG
--
2.0
--
uS
Fall Time
VCC = 125V, IC = 1A,
IB1 = 0.2A, IB2 = 0.2A,
RL = 125ohm
tf
--
0.16
--
uS
Notes:
a. Pulsed duration = 300uS, duty cycle ≤1.5%



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