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RB495D датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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RB495D датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode Low VF, Low IR, High Reliability Schottky Diode Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant packing code and prefix "G" on date code Min Max Min Max 2.65 3.05 0.104 0.120 1.19 1.40 0.047 0.055 Case :SOT-23 small outline plastic package 0.37 0.51 0.015 0.020 1.78 2.05 0.070 0.080 2.10 2.50 0.083 0.098 0.89 0.11 0.035 0.043 0.45 0.61 0.018 0.024 Unit (mm) Unit (inch) B C Green compound (Halogen free) with suffix "G" on Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260 °C/10s SOT23 Features Mechanical Data Weight :0.008 gram (approximately) A Ordering Information Dimensions E F D G B A C D G E F Package SOT23 Maximum Ratings Electrical Characteristics IR= 100 μA Forward Voltage IF= 10mA IF= 200mA VR= 25V Junction Capacitance VR=0, f=1.0MHz Notes:1. 8.3ms singlehalf Sine-wave Reverse Leakage Current VF Reverse Voltage VR 25 V IR 70 μA V 1.5 Value Symbol PD Power Dissipation mW Maximum Ratings and Electrical Characteristics Ordering Information - - - - 0.3 0.5 pF CJ -50 Part No. RB495D RF Packing 3Kpcs/7" Reel Type Number Symbol 40 Units V Min Max Reverse Breakdown Voltage V(BR) °C -40 to + 125 Junction and Storage Temperature Range TJ, TSTG A Non-Repetitive Peak Forward Surge Current (Note 1) VRRM Repetitive Peak Reverse Voltage Mean Forward Current IO V 350 mA 40 IFSM 200 Rating at 25 °C ambient temperature unless otherwise specified. Type Number Units Electrical Symbol 3 1 2 Anode Cathode Anode/Cathode Version : A09 |
Аналогичный номер детали - RB495D |
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Аналогичное описание - RB495D |
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