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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MBRF5100 датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBRF5100 датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  MBRF5100 - MBRF5200 Isolation 5.0 AMPS. Schottky Barrier Rectifiers Pb RoHS COMPLIANCE RoHS COMPLIANCE ITO-220AC Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260 oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: JEDEC ITO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MBRF 5100 MBRF 5150 MBRF 5200 Units Maximum Recurrent Peak Reverse Voltage VRRM 100 150 200 V Maximum RMS Voltage VRMS 70 105 140 V Maximum DC Blocking Voltage VDC 100 150 200 V Maximum Average Forward Rectified Current I(AV) 5 A Peak Repetitive Forward Current (Square Wave, 20KHz) at Tc=105 oC IFRM 10 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 120 A Peak Repetitive Reverse Surge Current (Note 1) IRRM 0.5 A Maximum Instantaneous Forward Voltage at (Note 2) IF=5A,Tc=25 oC IF=5A,Tc=125 oC VF 0.90 0.80 1.02 0.92 V Maximum Instantaneous Reverse Current @ Tc =25 oC at Rated DC Blocking Voltage (Note 2) @ Tc=125 oC IR 0.1 5.0 mA mA Voltage Rate of Change (Rated VR) dV/dt 10,000 V/uS Typical Junction capacitance Cj 310 pF Maximum Thermal Resistance, (Note 3) RθJC 3.0 oC /W Operating Junction Temperature Range TJ -65 to +150 oC Storage Temperature Range TSTG -65 to +175 oC Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. Version: B09 0.195 (4.95) 0.205 (5.20) |
Аналогичный номер детали - MBRF5100 |
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Аналогичное описание - MBRF5100 |
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