2009.12.15

Version : 1.0

page

2of5

SSF6014

Total gate charge

—

45

—

nC

—

4

—

—

15

—

—

14.6

—

nS

Rise time

—

14.2

—

—

40

—

Fall time

—

7.3

—

—

1480

—

pF

f=1.0MHZ

—

190

—

—

135

—

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current

.

(Body Diode)

—

—

60

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Pulsed Source Current

.

(Body Diode) ①

—

—

240

—

—

1.3

V

Reverse Recovery Time

－

33

—

nS

di/dt=100A/μs ③

－

61

—

nC

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Gate charge test circuit:

EAS test circuit:

Notes:

①

Repetitive rating; pulse width limited by max junction temperature.

②

Test condition: L =0.3mH, VDD = 30V,Id=37A

③

Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C