SSF2300B

Zero Gate Voltage Drain Current

I

V =20V,V =0V

1

μA

DSS

DS

GS

Gate-Body Leakage Current

I

V =±10V,V =0V

±100

nA

GSS

GS

DS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

0.5

0.7

1.5

V

V =2.5V, I

GS

35

50

mΩ

Drain-Source On-State Resistance

V =4.5V, I

GS

28

40

mΩ

Forward Transconductance

g

V =10V,I

FS

DS

8

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

500

PF

lss

Output Capacitance

250

PF

V =10V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

90

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

7

nS

d(on)

Turn-on Rise Time

55

nS

V =10V, R = 2.8 Ω

DD

L

Turn-Off Delay Time

16

nS

=4.5V,R

Turn-Off Fall Time

10

nS

Total Gate Charge

Q

10

nC

g

Gate-Source Charge

2.3

nC

V =10V,I

Gate-Drain Charge

DS

=4.5V

GS

2.9

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =1.3A

1.2

V

SD

GS

S

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

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