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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LSF830C1 датащи(PDF) 1 Page - Marktech Corporate |
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LSF830C1 датащи(HTML) 1 Page - Marktech Corporate |
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1 / 1 page  LSF830C1 Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) SYMBOL MIN TYP MAX UNIT PO 2.5 mW VF 1.5 2.1 V IR 100 μ A λ p 830 nm Δλ 30 nm θ ±25 deg. ① Anode ② Cathode FEATURES ･ High-output Power ･ Compact ･ High Reliability APPLICATIONS ･Optical Switches ･ Optical Sensors 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL UNIT IF mA IFP A VR V PD mW Topr ℃ Tstg ℃ Tj ℃ Tls ℃ *2:Time 5 Sec max,Position:Up to 3mm from the body Peak Wavelength Spectral Line Half Width Half Intensity Beam Angle I T E M Power Output Forward Voltage Reverse Current IF=20mA IF=20mA IF=20mA CONDITIONS IF=20mA IF=20mA VR=5V I T E M Forward Current (DC) Forward Current (Pulse)*1 Reverse Voltage Power Dissipation Operating Temp. Storage Temp. Junction Temp. 5 100 -20 TO 85 -30 TO 100 RATINGS Dimensions (Unit:mm) 60 0.5 100 260 Lead Soldering Temp.*2 *1:Tw=10uS,T=10mS THERMAL DERATING CURVE 0 10 20 30 40 50 60 70 80 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) FORWARD I-V CHARACTERISTICS 0 10 20 30 40 50 60 01 23 FORWARD VOLTAGE(V) SPECTRAL OUTPUT 0 20 40 60 80 100 120 730 830 930 WAVELENGTH(nm) RADIATION PATTERN 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 BEAM ANGLE(deg.) RELATIVE POWER vs FORWARD CURRENT 0 50 100 150 200 250 0 1020 3040 5060 FORWARD CURRENT(mA) OPTRANS 2008/6/9 To purchase this part contact Marktech Optoelectronics at 800.984.5337 Optoelectronics www.marktechopto.com Marktech |
Аналогичный номер детали - LSF830C1 |
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Аналогичное описание - LSF830C1 |
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