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CLI710 датащи(PDF) 1 Page - Clairex Technologies, Inc

номер детали CLI710
подробное описание детали  IRED - Phototransistor Reflective Object Sensor
PDF  1 Pages
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производитель  CLAIREX [Clairex Technologies, Inc]
домашняя страница  http://www.clairex.com
Logo CLAIREX - Clairex Technologies, Inc

CLI710 датащи(HTML) 1 Page - Clairex Technologies, Inc

  CLI710 Datasheet HTML 1Page - Clairex Technologies, Inc  
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Clairex Technologies, Inc.
1301 East Plano Parkway
Plano, Texas 75074-8524
Phone: 972-265-4900
Fax: 972-265-4949
www.clairex.com
CLI710
IRED – Phototransistor
Reflective Object Sensor
Clairex
Technologies, Inc.
March, 2002
features
• 0.020” dia. light pipe aperture
• T0-72 package
• analog output
description
The CLI710 consists of an 880nm
AlGaAs IRED and a phototransistor
mounted on a custom TO-72 header.
The IRED emits a broad radiation
pattern through the formed clear
epoxy lens. Radiation reflected
from the target is received by a
0.020” diameter fiber optic light pipe
attached to the active area of the
phototransistor. For assistance or
other configurations, call Clairex.
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature ........................................................................ -40°C to +125°C
operating temperature ..................................................................... -40°C to +100°C
lead soldering temperature
(1) ........................................................................... 260°C
IRED
continuous forward DC current
(2) ......................................................................35mA
reverse DC voltage................................................................................................5V
continuous power dissipation
(3)......................................................................100mW
PHOTOTRANSISTOR
collector-emitter voltage ......................................................................................30V
emitter-collector voltage ........................................................................................5V
continuous power dissipation
(4)......................................................................100mW
note:
1.
0.06” (1.5mm) from the header for 5 seconds maximum
2.
Derate linearly 0.37mA/°C from 25°C free air temperature to TA = +100°C.
3.
Derate linearly 1.07mW/°C from 25°C free air temperature to TA = +100°C.
4.
Derate linearly 1.07mW/°C from 25°C free air temperature to TA = +100°C.
®
electrical characteristics (TA = 25°C and VCC = 5.0V unless otherwise noted)
symbol
parameter
min
typ
max
units
test conditions
Input IRED
VF
Forward voltage
-
1.50
1.65
V
IF = 20mA
IR
Reverse current
-
-
10
µA
VR = 5V
Output Phototransistor
V(BR)CEO
Collector-emitter breakdown voltage
30
-
-
V
IC = 1mA, IF = 0, Ee = 0
V(BR)ECO
Emitter-collector breakdown voltage
5.0
-
-
V
IE = 100µA, IF = 0, Ee = 0
ID
Dark current
-
-
20
nA
VCE = 10V, IF = 0, Ee = 0
Coupled
IL
Light current(4)
150
250
-
µA
VCE = 5V, IF = 20mA, d = 0.030”
ICX (ratio)
Crosstalk ratio(5)
3
10
-
VCE = 5V, IF = 20mA
notes:
4. Measured using a Kodak 90% diffuse reflectance neutral white test card.
5. No reflective surface. ICX(ratio) = IL(µA)/ICX(µA).
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
0.175 (4.46)
0.500(12.7) min.
0.165 (4.21)
0.187 (4.75)
0.179 (4.55)
0.030 (0.76) max.
1
2
3
2. Anode
3. Output
4. Ground
1. Vcc
4
0.028 (0.71)
0.048 (1.22)
0.046 (1.17)
0.036 (0.91)
45°
0.209 (5.31)
0.230 (5.84)
0.021 (0.53) Dia
0.017 (0.43) 3 Places
0.100 Dia
0.160 (4.08) Emitting Window
0.150 (3.81)
Diameter
0.020 (0.50) Diameter
Detection Area
1
2
3
4
ALL DIMENSIONS
ARE IN INCHES
(MILLIMETERS)
4
Revised 3/16/06
Cathode
Emitter
Collector
2
1
4
3
Internally
connected
to header


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