CHA7010

Ref. : DSCHA70102175 -24-June-02

1/7

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band GaInP HBT High Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA7010 is a monolithic two stage

GaAs high power amplifier designed for X

band applications.

This device is manufactured using a GaInP

HBT process, including, via holes through

the substrate and air bridges. A nitride

layer protects the transistors and the

passive components. Special heat removal

techniques are implemented to guarantee

high reliability.

To simplify the assembly process;

• the backside of the chip is both RF and

DC grounded

• bond pads and back side are gold

plated for compatibility with eutectic die

attach method and thermo-sonic or

thermo-compression bonding process.

Main Features

n 10W output power

n High gain : > 18dB @ 10GHz

n High PAE : > 35% @ 10GHz

n On-chip bias control

n Linear collector current control

n High impedance interface for pulse

mode

n Temperature compensated

n Chip size: 4.74 x 4.36 x 0.1 mm

Vctr

Vc

Vctr

Vc

Vctr

Vc

Vctr

Vc

Inter-stage

Input

Matching

Network

Output

Combiner

Main Characteristics

Tamb = +25°C

Symbol

Parameter

Min

Typ

Max

Unit

F_op

Operating frequency range

8.4

9.4

10.4

GHz

P_sat

Saturated output power

10

W

P_1dBc

Output power @ 1dBc

8

W

G_lin

Linear gain

18

dB

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !