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CHA2069RAF/24 датащи(PDF) 6 Page - United Monolithic Semiconductors |
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CHA2069RAF/24 датащи(HTML) 6 Page - United Monolithic Semiconductors |
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6 / 7 page ![]() CHA2069RAF 18-31GHz Low Noise Amplifier Ref. : DSCHA2069RAF2169 -18-June-02- 6/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 The RF ports comprise a DC blocking capacitor on chip level. The DC connections include a first level of DC decoupling capacitors (typically 120pF) in the package. However, all DC bias ports should be additionally connected to ground with 10nF capacitors at board level to prevent the MMIC from oscillations. These parts should be placed close to the SMD leadless package. If the same bias is required at different DC ports, the lines should only be connected behind these block capacitors. Further information on the application of the SMD leadless packages for GaAs monolithic microwave ICs are given in the UMS Application Note AN0005. |
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