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DLD101 датащи(PDF) 2 Page - Diodes Incorporated

номер детали DLD101
подробное описание детали  LINEAR MODE CURRENT SINK LED DRIVER
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DLD101 датащи(HTML) 2 Page - Diodes Incorporated

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DLD101
Document number: DS32007 Rev. 6 - 2
2 of 7
www.diodes.com
February 2010
© Diodes Incorporated
DLD101
Electrical Characteristics: (Q1) @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
100
⎯
⎯
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1
μA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
2.0
⎯
4.1
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
⎯
⎯
0.85
0.99
Ω
VGS = 10V, ID = 1.5A
VGS = 6V, ID = 1A
Forward Transconductance
gfs
⎯
0.9
⎯
S
VDS = 15V, ID = 1A
Diode Forward Voltage
VSD
⎯
0.89
1.1
V
VGS = 0V, IS = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
129
⎯
pF
VDS = 50V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
14
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
8
⎯
pF
SWITCHING CHARACTERISTICS
Total Gate Charge
Qg
⎯
3.4
⎯
nC
VDS = 50V, VGS = 10V, ID = 1A
Gate-Source Charge
Qgs
⎯
0.9
⎯
Gate-Drain Charge
Qgd
⎯
1
⎯
Turn-On Delay Time
td(on)
⎯
7.9
⎯
ns
VGS = 50V, VDS = 10V,
ID = 1A, RG ≈ 6Ω
Rise Time
tr
⎯
11.4
⎯
Turn-Off Delay Time
td(off)
⎯
14.3
⎯
Fall Time
tf
⎯
9.6
⎯
Electrical Characteristics: (Q2) @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
VI(off)
0.4
-
-
V
VCC = 5V, IO = 100μA
VI(on)
-
-
1.5
V
VCC = 0.3V, IO = 5mA
Output Voltage
VO(on)
-
0.05
0.3
V
IO/II = 5mA/0.25mA
Output Current
IO(off)
-
-
0.5
μA
VCC = 50V, VI = 0V
DC Current Gain
G1
80
-
-
-
VO = 5V, IO = 10mA
Input Resistance
R1
3.2
4.7
6.2
k
Ω
-
Resistance Ratio
R2/R1
8
10
12
-
-
Transition Frequency
fT
-
260
-
MHz
VCE = 10V, IE = 5mA,
f = 100MHz
Notes:
4. Short duration pulse test used to minimize self-heating effect.



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