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TLP137 датащи(PDF) 2 Page - Toshiba Semiconductor |
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TLP137 датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 9 page ![]() TLP137 2002-09-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 53°C) ∆IF / °C -0.7 mA / °C Peak forward current (100µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector -emitter voltage VCEO 80 V Collector -base voltage VCBO 80 V Emitter -collector voltage VECO 7 V Emitter -base voltage VEBO 7 V Collector current IC 50 mA Peak collector current (10ms pulse, 100pps) ICP 100 mA Power dissipation PC 150 mW Power dissipation derating (Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.0 mW / °C Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) BVS 3750 V r m s (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. |
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