EM48AM1684LBA datasheet(4/18 Pages) EOREX

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eorex

EM48AM1684LBA

Mar. 2009

www.eorex.com

Pin Description (Simplified)

Name

Function

CLK

(System Clock)

Master clock input (Active on the positive rising edge)

/CS

(Chip Select)

Selects chip when active

CKE

(Clock Enable)

Activates the CLK when “H” and deactivates when “L”.

CKE should be enabled at least one cycle prior to new

command. Disable input buffers for power down in standby.

H7,H8,J8,J7,J3,

J2,H3,H2,H1,G3,

H9,G2,G1

A0~A12

(Address)

Row address (A0 to A12) is determined by A0 to A12 level at

the bank active command cycle CLK rising edge.

CA (CA0 to CA8) is determined by A0 to A8 level at the read or

write command cycle CLK rising edge.

And this column address becomes burst access start address.

A10 defines the pre-charge mode. When A10= High at the

pre-charge command cycle, all banks are pre-charged.

But when A10= Low at the pre-charge command cycle, only the

bank that is selected by BA0/BA1 is pre-charged.

G7,G8

BA0, BA1

(Bank Address)

Selects which bank is to be active.

/RAS

(Row Address Strobe)

Latches Row Addresses on the positive rising edge of the CLK

with /RAS “L”. Enables row access & pre-charge.

/CAS

(Column Address Strobe)

Latches Column Addresses on the positive rising edge of the

CLK with /CAS low. Enables column access.

/WE

(Write Enable)

Latches Column Addresses on the positive rising edge of the

CLK with /CAS low. Enables column access.

F1/E8

UDQM/LDQM

(Data Input/Output Mask)

DQM controls I/O buffers.

A8,B9,B8,C9,C8,

D9,D8,E9,E1,D2,

D1,C2,C1,B2,B1,

DQ0~DQ15

(Data Input/Output)

DQ pins have the same function as I/O pins on a conventional

DRAM.

A9,E7,J9/

A1,E3,J1

VDD/VSS

(Power Supply/Ground)

VDD and VSS are power supply pins for internal circuits.

A7,B3,C7,D3/

A3,B7,C3,D7

VDDQ/VSSQ

(Power Supply/Ground)

VDDQ and VSSQ are power supply pins for the output buffers.

(No Connection)

This pin is recommended to be left No Connection on the

device.

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