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HT45R35V датащи(PDF) 4 Page - Holtek Semiconductor Inc |
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HT45R35V датащи(HTML) 4 Page - Holtek Semiconductor Inc |
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4 / 42 page ![]() Pin Name I/O Options Description BZO BZO O ¾ High voltage buzzer complement output signals VO ¾¾ LDO regulator output VCC ¾¾ High voltage positive power supply for driving the VFD filament, F1O, BZO and BZO outputs. An external 10uF capacitor is recommended to be connected to ground on the PCB to reduce surge voltages. VFD0~VFD23 O ¾ High voltage grid/segment output for VFD panel RES I ¾ Schmitt trigger reset input. Active low VSS ¾¾ Negative power supply, ground VDD ¾¾ Positive power supply OSC1 OSC2 I O Crystal or RC OSC1, OSC2 are connected to an RC network or Crystal determined by a configuration option, for the internal system clock. In the case of the RC oscillator, OSC2 can be used to monitor the system clock. Its frequency is 1/4 system clock. Note: 1. *All pull-high resistors are controlled by an option bit. 2. Pin PB3~PB7 are five internal pins only and not bound out and its port control register must setup this pin as an output. 3. PB3~PB7 individual pins can be selected to have a pull-high resistor. Absolute Maximum Ratings Supply Voltage ...........................VSS -0.3V to VSS+6.0V Storage Temperature ............................ -50°Cto125°C Input Voltage..............................VSS -0.3V to VDD+0.3V Operating Temperature........................... -40°Cto85°C VCC Supply Voltage.....................................12V to 24V IOL Total ..............................................................150mA IOH Total ............................................................ -100mA Total Power Dissipation .....................................500mW Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD VCC Conditions VDD Operating Voltage ¾¾ fSYS=4MHz 2.2 ¾ 5.5 V fSYS=8MHz 3.3 ¾ 5.5 V IDD1 Operating Current (Crystal OSC, RC OSC) 3V ¾ No load, fSYS=4MHz ¾ 12 mA 5V ¾¾ 35 mA IDD2 Operating Current (Crystal OSC, RC OSC) 5V ¾ No load, fSYS=8MHz ¾ 48 mA ISTB1 Standby Current (WDT Enabled) 3V ¾ No load, system HALT ¾¾ 5 mA 5V ¾¾ ¾ 10 mA ISTB2 Standby Current (WDT Disabled) 3V ¾ No load, system HALT ¾¾ 1 mA 5V ¾¾ ¾ 2 mA VIL1 Input Low Voltage for I/O Ports, TMR, INT0 and INT1 ¾¾ ¾ 0 ¾ 0.3VDD V HT45R35V Rev. 1.00 4 January 15, 2009 |
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