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34845B датащи(PDF) 5 Page - Freescale Semiconductor, Inc |
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34845B датащи(HTML) 5 Page - Freescale Semiconductor, Inc |
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5 / 21 page ![]() Analog Integrated Circuit Device Data Freescale Semiconductor 5 34845 ELECTRICAL CHARACTERISTICS STATIC AND DYNAMIC ELECTRICAL CHARACTERISTICS STATIC AND DYNAMIC ELECTRICAL CHARACTERISTICS Table 3. Static and Dynamic Electrical Characteristics Characteristics noted under conditions VIN = 12 V, VOUT = 35 V, ILED = 30 mA, fS = 600 kHz, fPWM = 600 Hz - 40°C ≤ TA ≤ 85 °C, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit SUPPLY Supply Voltage VIN 5.0 10 21 V Supply Current when in Shutdown Mode EN = Low, PWM = Low ISHUTDOWN - 2.0 10 μA Supply Current when Operational Mode Boost = Pulse Skipping, Channels = 1% of Duty Cycle EN = High, PWM = Low IOPERATIONAL - 5.0 6.5 mA Under-voltage Lockout VIN Rising UVLO 4.0 - 4.4 V Under-voltage Hysteresis VIN Falling UVLOHYST - 0.25 - V VDC1 Voltage(6) CVDC1 = 2.2 μF VDC1 2.4 2.5 2.6 V VDC2 Voltage(6) (VIN between 7.0 and 21 V) CVD2C = 2.2 μF VDC2 5.7 6.0 6.3 V BOOST Output Voltage Range(7) VIN = 5.0 V VIN = 21 V VOUT1 VOUT2 8.0 24 - - 43 60 V Boost Switch Current Limit 34845, 34845A 34845B IBOOST_LIMIT 1.9 2.1 2.1 2.35 2.3 2.6 A Boost Switch Current Limit Timeout tBOOST_TIME - 10 - ms RDSON of Internal FET IDRAIN= 1.0 A RDSON - 300 520 m Ω Boost Switch Off state Leakage Current VSWA,SWB = 60 V IBOOST_LEAK - - 1.0 μA Feedback pin Off-state Leakage Current VOUT = 60 V VOUTLEAK - - 500 μA Peak Boost Efficiency(8) VOUT = 33 V, RL = 330 Ω EFFBOOST - 90 - % Notes 6. This output is for internal use only and not to be used for other purposes 7. Minimum and maximum output voltages are dependent on Min/Max duty cycle condition. 8. Boost efficiency test is performed under the following conditions: fSW = 600 kHz, VIN = 12 V, VOUT = 33 V and RL = 330 Ω. The following external components are used: L = 10 μH DCR = 0.1 Ω, COUT = 3x1 μF (ceramic), Schottky diode VF = 0.35 V. |
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