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APTM120VDA57T3G датащи(PDF) 6 Page - Microsemi Corporation

номер детали APTM120VDA57T3G
подробное описание детали  Dual Boost chopper MOSFET Power Module
PDF  7 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120VDA57T3G датащи(HTML) 6 Page - Microsemi Corporation

  APTM120VDA57T3G Datasheet HTML 1Page - Microsemi Corporation APTM120VDA57T3G Datasheet HTML 2Page - Microsemi Corporation APTM120VDA57T3G Datasheet HTML 3Page - Microsemi Corporation APTM120VDA57T3G Datasheet HTML 4Page - Microsemi Corporation APTM120VDA57T3G Datasheet HTML 5Page - Microsemi Corporation APTM120VDA57T3G Datasheet HTML 6Page - Microsemi Corporation APTM120VDA57T3G Datasheet HTML 7Page - Microsemi Corporation  
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APTM120VDA57T3G
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
180
5
101520253035
ID, Drain Current (A)
VDS=800V
RG=5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
5
10
152025
3035
ID, Drain Current (A)
VDS=800V
RG=5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
5
101520253035
ID, Drain Current (A)
VDS=800V
RG=5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
1
2
3
4
0
5
10
15
20
25
30
35
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=800V
ID=17A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
200
225
4
6
8
1012
1416
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage



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