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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MJ4033 датащи(PDF) 3 Page - Comset Semiconductor |
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MJ4033 датащи(HTML) 3 Page - Comset Semiconductor |
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3 / 4 page  Page 3 of 4 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit MJ4030 MJ4033 60 - - MJ4031 MJ4034 80 - - VCEO Collector-Emitter Voltage (*) IC=100 mAdc, IB=0 MJ4032 MJ4035 100 V VCE=30 Vdc, IB=0 MJ4030 MJ4033 - - VCE=40 Vdc, IB=0 MJ4031 MJ4034 - - ICEO Collector Cutoff Current VCE=50 Vdc, IB=0 MJ4032 MJ4035 - - 3.0 mA MJ4030 MJ4033 MJ4031 MJ4034 IEBO Emitter Cutoff Current VBE=5.0 V, IC=0 MJ4032 MJ4035 - - 5.0 mA VCB=60 V, RBE=1.0 k ohm MJ4030 MJ4033 - - VCB=80 V, RBE=1.0 k ohm MJ4031 MJ4034 - - VCB=100 V, RBE=1.0 k ohm MJ4032 MJ4035 1.0 VCB=60 V, RBE=1.0 k ohm, TC=150°C MJ4030 MJ4033 - - VCB=80 V, RBE=1.0 k ohm, TC=150°C MJ4031 MJ4034 - - ICER Collector-Emitter Leakage Current VCB=100 V, RBE=1.0 k ohm, TC=150°C MJ4032 MJ4035 5.0 mAdc MJ4030 MJ4033 MJ4031 MJ4034 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=40 mAdc MJ4032 MJ4035 - - 2.5 Vdc |
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