BUR52 datasheet(2/4 Pages) COMSET

номер детали	BUR52

подробное описание детали	HIGH CURRENT NPN SILICON TRANSISTORS

PDF	4 Pages

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производитель	COMSET [Comset Semiconductor]

домашняя страница	http://comset.halfin.com

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2 / 4 page

BUR52

COMSET SEMICONDUCTORS

2/4

Symbol

Ratings

Value

Unit

Base Current

Power Dissipation

@ TC = 25°

350

Watts

Junction Temperature

200

Storage Temperature

-55 to +200

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-C

Thermal Resistance, Junction to Case

0.5

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

ICEO

Collector Cutoff Current

VCE = 250 V ; (IB = 0)

IEBO

Emitter Cutoff Current

VBE = 7 V ; (IC = 0)

0.2

µA

TCASE = 25°C ; VCB = 350 V ; (IE = 0)

0.2

ICBO

Collector Cutoff Current

TCASE = 125°C ; VC = 350 V ; (IE = 0)

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (*)

IC = 200 A

250

VEBO

Emitter-Base Voltage

IC = 10 mA ; (IC = 0)

IC = 25 A ; IB = 2 A

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC = 40 A ; IB = 4 A

0.7

1.5

IC = 25 A ; IB = 2 A

1.8

VBE(SAT)

Base-Emitter saturation

Voltage (*)

IC = 40 A ; IB = 4 A

1.5

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