PNP BD684 TO3 (Temporary part number)

Temporary data sheet

COMSET SEMICONDUCTORS

1

PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video

applications.

They are mounted in Jedec TO-3 metal package.

Compliance to RoHS.

SILICON DARLINGTON POWER

TRANSISTORS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

140

V

Collector-Base Voltage

140

V

Emitter-Base Voltage

5

V

4

Collector Current

6

A

Base current (peak value)

0.1

A

Total power Dissipation

65

Watts

Junction Temperature

150

°C

Storage Temperature

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to mouting base

3.12

K/W

Thermal Resistance, Junction to ambient in free air

100

K/W