2N5321 datasheet(2/3 Pages) COMSET

номер детали	2N5321

подробное описание детали	SILICON PLANAR EPITAXIAL TRANSISTORS

PDF	3 Pages

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производитель	COMSET [Comset Semiconductor]

домашняя страница	http://comset.halfin.com

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2 / 3 page

NPN 2N5320 – 2N5321

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

VCB = 80 V, IE =0

2N5320

0.5

ICBO

Collector Cutoff Current

VCB = 60 V, IE =0

2N5321

µA

VEB = 5 V, IC =0

2N5320

0.1

IEBO

Emitter Cutoff Current

VEB = 4 V, IC =0

2N5321

0.5

µA

2N5320

VCEO

Collector Emitter Breakdown

Voltage

IC = 10 mA, IB =0

2N5321

2N5320

100

VCEV

Collector Emitter Breakdown

Voltage

IC = 100 µA

VBE = 1.5V

2N5321

2N5320

VEBO

Emitter Base Breakdown

Voltage

IE = 100 µA, IC =0

2N5321

2N5320

130

IC = 500 mA

VCE = 4 V

2N5321

250

hFE (1)

DC Current Gain

IC = 1 A

VCE = 2 V

2N5320

0.5

VCE(SAT) (1)

Collector-Emitter saturation

Voltage

IC = 500 mA, IB = 50 mA

2N5321

0.8

2N5320

1.1

VBE (1)

Base-Emitter Voltage

IC = 500 mA, VCE = 4 V

2N5321

1.4

2N5320

Transition frequency

IC = 50 mA, VCE = 4 V

f = 10 MHz

2N5321

MHz

2N5320

ton

Turn-on Time

IC = 500 mA, VCC = 30 V

IB1 = 50 mA

2N5321

2N5320

toff

Turn-off Time

IC = 500 mA, VCC = 30 V

IB1 = -IB2 = 50 mA

2N5321

800

(1) Pulse conditions : tp < 300

µs, δ =1%

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