2N4902 datasheet(2/3 Pages) COMSET

номер детали	2N4902

подробное описание детали	PNP SILICON TRANSISTORS, EPITAXIAL BASE

PDF	3 Pages

Scroll/Zoom	100%

производитель	COMSET [Comset Semiconductor]

домашняя страница	http://comset.halfin.com

Logo

2 / 3 page

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJC

Thermal Resistance, Junction to Case

°C/W

RthJA

Junction to Free Air Thermal Resistance

47.3

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Unit

2N4901

-40

2N4902

-60

VCEO(BR)

Collector-Emitter

Breakdown Voltage)

IC=200 mAdc, IB=0

2N4903

-80

VCE=-2.0 V, IC=-1.0 A

2N4901

2N4902

2N4903

hFE

DC Current Gain (*)

VCE=-2.0 V, IC=-5.0 A

2N4901

2N4902

2N4903

VCE=-40 V, IE=0

2N4901

0.1

VCE=-60 V, IE=0

2N4902

0.1

ICBO

Collector-Base cut-off

Current

VCE=-80 V, IE=0

2N4903

0.1

VCE=-40 V, VEB=1.5 V

-0.1

VCE=-40 V, VEB=1.5 V,

TCASE=150°C

2N4901

-2.0

VCE=-60 V, VEB=1.5 V

-0.1

VCE=-60 V, VEB=1.5 V,

TCASE=150°C

2N4902

-2.0

VCE=-80 V, VEB=1.5 V

-0.1

ICEX

Collector Cutoff Current

VCE=-80 V, VEB=1.5 V,

TCASE=150°C

2N4903

-2.0

IEBO

Emitter Cutoff Current

VBE=5.0 V, IC=0

2N4901

2N4902

2N4903

-1.0

Hfe

Forward Current Transfer

Ratio (*)

VCE=-10 V, IC=-0.5 A

f =1MHz

2N4901

2N4902

2N4903

IC=-1.0 A, IB=-0.1 A

2N4901

2N4902

2N4903

-0.4

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=-5.0 A, IB=-1.0 A

2N4901

2N4902

2N4903

-1.5

VBE

Base-Emitter Voltage (*)

IC=-1.0 A, VCE=-2.0 V

2N4901

2N4902

2N4903

-1.2

2N4902 датащи(PDF) 2 Page - Comset Semiconductor

2N4902 датащи(HTML) 2 Page - Comset Semiconductor

Html Pages

1 2 3

датащи скачать

ссылки URL