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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TAS5613 датащи(PDF) 10 Page - Texas Instruments |
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TAS5613 датащи(HTML) 10 Page - Texas Instruments |
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10 / 27 page  TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com ELECTRICAL CHARACTERISTICS (continued) PVDD_X = 36V, GVDD_X = 12V, VDD = 12V, TC (Case temperature) = 75°C, fS = 400kHz, unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 50% duty cycle with recommended output 12.5 mA filter IPVDD_x Half-bridge idle current Reset mode, No switching 620 μA ANALOG INPUTS RIN Input resistance READY = HIGH 33 k Ω VIN Maximum input voltage swing 7 V IIN Maximum input current 1 mA G Inverting voltage Gain, (VOUT/VIN) 21 dB OSCILLATOR Nominal, Master Mode 3.5 4 4.5 fOSC_IO+ AM1, Master Mode FPWM × 10 3.0 3.4 3.8 MHz AM2, Master Mode 2.6 3 3.35 VIH High level input voltage 1.86 V VIL Low level input voltage 1.45 V OUTPUT-STAGE MOSFETs Drain-to-source resistance, low side (LS) 60 100 m Ω TJ = 25°C, Includes metallization resistance, RDS(on) GVDD = 12V Drain-to-source resistance, high side (HS) 60 100 m Ω I/O PROTECTION Undervoltage protection limit, GVDD_x Vuvp,G 9.5 V and VDD Vuvp,hyst (1) 0.6 V Overtemperature warning 1, OTW1 (1) 95 100 105 °C OTW Overtemperature warning 2, OTW2 (1) 115 125 135 °C Temperature drop needed below OTW OTWHYST (1) temperature for OTW to be inactive after 25 °C OTW event. OTE(1) Overtemperature error 145 155 165 °C OTE- OTE-OTW differential 30 °C OTWdifferential (1) A reset needs to occur for SD to be OTEHYST (1) 25 °C released following an OTE event OLPC Overload protection counter fPWM = 400kHz 2.6 ms Resistor – programmable, nominal peak 14 current in 1 Ω load, ROCP = 30kΩ IOC Overcurrent limit protection A Resistor – programmable, nominal peak current in 1 Ω load, ROCP = 22kΩ (with 18 Schottky diodes on output nodes) Resistor – programmable, peak current in 14 1 Ω load, ROCP = 64kΩ IOC_LATCHED Overcurrent limit protection A Resistor – programmable, nominal peak current in 1 Ω load, ROCP = 47kΩ (with 18 Schottky diodes on output nodes) Time from switching transition to flip-state IOCT Overcurrent response time 150 ns induced by overcurrent. Connected when RESET is active to provide IPD Output pulldown current of each half 3 mA bootstrap charge. Not used in SE mode. STATIC DIGITAL SPECIFICATIONS VIH High level input voltage 1.9 V INPUT_X, M1, M2, M3, RESET VIL Low level input voltage 0.8 V Leakage Input leakage current 100 μA (1) Specified by design. 10 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 |
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