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R
RT
T223300P
PD
D
P
Poow
weerr T
Trraan
nssiissttoorr
▪ All specifications may change without notice.
▪ Version 5.2
Description
The RT230PD is designed for base stations and cell extenders and operating frequency range is from 50MHz to 4GHz.
RT230PD is GaAs HFET in SP-12 type package which has superior performance against the heat at high temperature
for its high reliability. It also has high efficiency, high gain and has a strong advantage using it as drive device at high
frequency.
RT230PD is 100% RF&DC tested.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
Vds
+12
V
Gate to Source Voltage Range
Vgs
0 to -5.0
V
Power Dissipation
Pt
7.5
W
Storage Temperature
Tstg
-65 to +175
℃
Channel Temperature
Tch
+175
℃
Electrical Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
Idss
1100
mA
Transconductance
gm
-
790
mS
Pinch-off Voltage
Vp
-1
-1.8
-3
V
Breakdown Voltage Gate-Source
Bvgs
-18
-25
V
Breakdown Voltage Gate-Drain
Bvgd
-18
-25
V
Output Power @ 1dB G.C.P
P1dB
34
34.5
dBm
Power Gain @ 1dB G.C.P
G1dB
14.5
dB
Power added efficiency
ηadd
50
%
Thermal Resistance
Rth
18
20
℃
/W
* Test Conditions : Vd=9V, Id=450mA, Ta=+25℃, Frequency=2.3GHz
Product Features
•
50 ~ 4000 MHz
•
18dB Gain@900MHz
•
34.5dBm P1dB@900MHz
•
47dBm Output IP3
•
GaAs HFET
Application
•
CDMA,W-CDMA Medium
Power Amplifier
•
High Linearity Drive Amplifier
•
ISM
•
MMDS
•
Wi-Fi, Wi-Max
Package : SP-12
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